BSS123
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Characteristic
Symbol
V DSS
Value
100
Unit
V
Gate-Source Voltage
Continuous Drain Current (Note 5) V GS = 10V
Continuous
Continuous
Pulsed
V GSS
I D
I DM
±20
170
680
V
mA
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T A = +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Max
300
417
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage , Forward
BV DSS
I DSS
I GSSF
100
0.1
10
50
V
μA
nA ?
nA
V GS = 0V, I D = 250μA
V DS = 100V, V GS = 0V
V DS = 20V, V GS = 0V
V GS = 20V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
g FS
V SD
0.8
80
-
1.4
370
0.84
2.0
6.0
10
1.3
V
?
mS
V
V DS = V GS , I D = 1mA
V GS = 10V, I D = 0.17A
V GS = 4.5V, I D = 0.17A
V DS =10V, I D = 0.17A, f = 1.0KHz
V GS = 0V, I S = 0.34A,
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
29
60
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
10
2
15
6
pF
V DS = 25V, V GS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t D(on)
8
ns
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
t r
t D(off)
t f
8
13
16
ns
ns
ns
V GS = 10V, V DD = 30V,
I D = 0.28A, R GEN = 50 ?
Notes:
5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
BSS123
Document number: DS30366 Rev. 18 - 2
2 of 5
www.diodes.com
August 2013
? Diodes Incorporated
相关PDF资料
BSS123_D87Z MOSFET N-CH 100V 170MA SOT-23
BSS123TC MOSFET N-CHAN 100V SOT23-3
BSS123W-7 MOSFET N-CH 100V 170MA SC70-3
BSS127S-7 MOSFET N CH 600V 50MA SOT23
BSS138_L99Z MOSFET N-CH 50V 220MA SOT-23
BSS138DW-7 MOSFET DUAL N-CHAN 50V SC70-6
BSS138K MOSFET N-CH 50V 220MA SOT-23-3
BSS138LT1 MOSFET N-CH 50V 200MA SOT-23
相关代理商/技术参数
BSS1237F 制造商: 功能描述: 制造商:undefined 功能描述:
BSS123-7-F 功能描述:MOSFET 100V 360mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BSS123-7-F-31 制造商:DIODES 功能描述:N-CHANNEL MOSFET / SOT-23 (LEAD FREE)
BSS123A 制造商:ZETEX 制造商全称:ZETEX 功能描述:N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
BSS123ATA 功能描述:MOSFET N-Chnl 100V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BSS123ATC 功能描述:MOSFET N-Chnl 100V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BSS123E6327 功能描述:MOSFET N-CH 100V 170MA SOT-23 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:SIPMOS® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
BSS123E6327T 制造商:Infineon Technologies AG 功能描述:N-CH MOSFET SOT23 T&R 3K 100V